PREPARATION OF FLUORINATED POLYIMIDE/POSS NANOCOMPOSITES WITH ULTRA-LOW DIELECTRIC CONSTANT BY GRAFT COPOLYMERIZATION

CHEN Yiwang; NIE Huarong; CHEN Lie; KANG En-Tang

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PREPARATION OF FLUORINATED POLYIMIDE/POSS NANOCOMPOSITES WITH ULTRA-LOW DIELECTRIC CONSTANT BY GRAFT COPOLYMERIZATION

Research Article | 更新时间：2021-03-19

- PREPARATION OF FLUORINATED POLYIMIDE/POSS NANOCOMPOSITES WITH ULTRA-LOW DIELECTRIC CONSTANT BY GRAFT COPOLYMERIZATION
- Acta Polymerica Sinica Issue 6, Pages: 807-812(2005)
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- Published：20 December 2005，
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CHEN Yiwang, NIE Huarong, CHEN Lie, KANG En-Tang. PREPARATION OF FLUORINATED POLYIMIDE/POSS NANOCOMPOSITES WITH ULTRA-LOW DIELECTRIC CONSTANT BY GRAFT COPOLYMERIZATION. [J]. Acta Polymerica Sinica (6):807-812(2005)
DOI：

CHEN Yiwang, NIE Huarong, CHEN Lie, KANG En-Tang. PREPARATION OF FLUORINATED POLYIMIDE/POSS NANOCOMPOSITES WITH ULTRA-LOW DIELECTRIC CONSTANT BY GRAFT COPOLYMERIZATION. [J]. Acta Polymerica Sinica (6):807-812(2005) DOI：

摘要

通过热引发甲基丙烯酸环戊基-立方低聚倍半硅氧烷(R7R′Si8O12

POSS)(MA-POSS)与臭氧预处理的含氟聚酰亚胺(FPI)自由基接枝共聚制得了含多面体低聚倍半硅氧烷(POSS)的FPI纳米复合物.用核磁共振(NMR)、X-射线衍射(XRD)及场发射扫描电镜(FESEM)等手段对POSS/FPI纳米复合物的化学组成及其形貌结构进行了表征.POSS/FPI纳米复合物薄膜与原始FPI薄膜相比具有更低的、可调的介电常数

它的介电常数(κ)在2.5～2.1之间.

Abstract

Nanocomposites of fluorinated polyimides (FPI) with covalently grafted polymethacrylate side chains containing polyhedral digomerie silsesquioxane (R7R'Si8O12 or POSS) units were prepared by thermally-initiated free-radical grit polymerization of methacrylcyclopentyl-POSS(MA-POSS) with the ozone-pretreated FPI．The chemical composition and structure of the FPI with grafted methaeryleyclopentyl-POSS side chains were characterized by nuclear magnetic resonance(1H-NMR) and X-ray diffraction (XRD)．The morphology of the POSS/FPI nanocomposite films was observed by field-emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM)．A layer-by-layer structure was revealed

which supports the formation of an ordered architecture by POSS crystallites in the FPI matrix

as the result of self-assembled POSS units of MA-POSS side chins The POSS/FPI nanocomposite films had both lower and tunable dielectric constants

in comparison with that of the pristine FPI films．Dielectric constants(k’s) of about 2.5 to 2.1 were obtained．The reduction of dielectric constant was most likely due to a combined contribution of the nanoporosity of the POSS units and the extemal porosity introduced by the grafting of MA-POSS to the FPI chains．

关键词

介电常数纳米复合物低聚倍半硅氧烷接枝共聚含氟聚酰亚胺

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