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超分子结构与材料国家重点实验室 吉林大学化学学院 长春 130012
Published:20 February 2018,
Received:31 August 2017,
Revised:22 September 2017,
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Xiao-yi Sun, Jin-yu Li, Hui Liu, Ping Lu. Design, Synthesis and Optoelectronic Properties of Silicon-containing Wide Bandgap Light-emitting Polymers. [J]. Acta Polymerica Sinica (2):284-294(2018)
Xiao-yi Sun, Jin-yu Li, Hui Liu, Ping Lu. Design, Synthesis and Optoelectronic Properties of Silicon-containing Wide Bandgap Light-emitting Polymers. [J]. Acta Polymerica Sinica (2):284-294(2018) DOI: 10.11777/j.issn1000-3304.2018.17247.
采用Suzuki聚合方法合成了以菲并咪唑为侧链的4种含硅宽禁带发光聚合物,并研究了这4种聚合物的光物理、电化学性质与电致发光性能.结果表明四苯基硅基团的引入能够得到宽的带隙,侧基上菲并咪唑的引入可以实现深蓝光发射.其中,基于聚合物
P1
的电致发光器件最大外量子效率为0.65%,最大发光效率为0.33 cd A
-1
,色坐标为(0.163,0.099).
The development of deep-blue light-emitting materials is of vital importance in organic light emitting diodes (OLEDs). Deep blue emission can efficiently reduce the power consumption in full-color displays. In this study
aiming at developing solution-processable materials for low-cost OLEDs
a series of wide bandgap polymers using tetraphenylsilane as the main chain and phenanthro[9
10-d] imidazole (PPI) as the side chain were designed and successfully synthesized
via
Suzuki coupling reactions. The silane group provides the polymers with wide bandgaps
and PPI unit entitles the polymers with high quantum efficiencies. All the polymers show good solubility in common organic solvents even without long alkyl chains. The emission spectra are all located in deep-blue region in THF peaking at 421 nm.
P1
P2
and
P4
show high quantum efficiencies of 82.3%-99.6% in THF.
P3
exhibits a relatively low efficiency of 34.0% due to the intramolecular interactions caused by the dibenzo[b
d]thiophene-5
5-dioxide in the mainchain. And only a few red-shifts in emission spectra are observed in the solid state. They also possess high thermal stability
good morphological stability and appropriate highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy levels. AFM characterization presents that the spin-coating film of the polymers display fairly homogenous and smooth surface morphology with the root mean square roughness of 0.57-0.71 nm. The non-doped solution-processed devices are fabricated with a configuration of ITO/PEDOT:PSS (40 nm)/EML (20 nm)/TPBi (30 nm)/LiF (1.2 nm)/Al (120 nm). Among them
the device using
P1
as emissive layer shows the best performance with a relatively high external quantum efficiency of 0.65% and deep blue CIE coordinates of (0.163
0.099). The maximum peak of EL emission was at 420 nm with narrow full width at half maximum (FWHM). All of these results gives us a new foreground for the design of deep-blue light-emitting polymers and inspire its application in the future.
聚合物电致发光器件深蓝光宽禁带菲并咪唑四苯基硅
Polymer light-emitting diodesDeep-blueWide bandgapPhenanthro[9 10-d]imidazoleTetraphenylsilane
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