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基于膜厚与分子量优化策略实现高效近红外有机光探测器
增强出版Achieving High-detectivity Near Infrared Organic Photodetectors through Optimizing Film Thickness and Polymer Molecular Weight
- 高分子学报 2022年53卷第4期 页码：433-440
- 作者机构：
华南理工大学高分子光电材料与器件研究所 发光材料与器件国家重点实验室 广州 510640
- 作者简介：
E-mail: msleiying@scut.edu.cn
- 基金信息：国家自然科学基金(基金号 ┣51933003);22005102┫;东莞市科技计划(2019622163009;2018607201002)
DOI：10.11777/j.issn1000-3304.2021.21350
中图分类号：纸质出版日期：2022-04-20，
网络出版日期：2022-02-22，
收稿日期：2021-11-17，
修回日期：2022-01-06，
- 稿件说明：
移动端阅览
邱红,钟知鸣,李美静等.基于膜厚与分子量优化策略实现高效近红外有机光探测器[J].高分子学报,2022,53(04):433-440.
Qiu Hong,Zhong Zhi-ming,Li Mei-jing,et al.Achieving High-detectivity Near Infrared Organic Photodetectors through Optimizing Film Thickness and Polymer Molecular Weight[J].ACTA POLYMERICA SINICA,2022,53(04):433-440.
邱红,钟知鸣,李美静等.基于膜厚与分子量优化策略实现高效近红外有机光探测器[J].高分子学报,2022,53(04):433-440. DOI： 10.11777/j.issn1000-3304.2021.21350.
Qiu Hong,Zhong Zhi-ming,Li Mei-jing,et al.Achieving High-detectivity Near Infrared Organic Photodetectors through Optimizing Film Thickness and Polymer Molecular Weight[J].ACTA POLYMERICA SINICA,2022,53(04):433-440. DOI： 10.11777/j.issn1000-3304.2021.21350.
摘要
利用基于[1
2
3
]
三唑并[4
5-
f
]
异吲哚-5
7(2
H
6
H
)-二酮(TzBI)共轭聚合物PTzBI-Cl为给体，非富勒烯小分子Y6DT为受体，制备基于倒装结构的有机本体异质结光探测器. 基于高分子量聚合物PTzBI-Cl-H制备的器件比低分子量材料制备的器件具有更低的暗电流和更高的光探测性能. 通过对PTzBI-Cl:Y6DT进行薄膜厚度调控，在保持较高的外量子效率的同时显著地降低了暗电流密度，提高了器件探测率. 活性层厚度为330 nm时，光探测器在-0.1 V偏压下的暗电流为2.3×10
-10
A·cm
-2
，在±2 V范围内整流比为10
6
. 在-0.1 V偏压下器件在500~880 nm的工作波段的比探测率均高于10
13
cm·Hz
-1/2
·W
-1
，最大值位于830 nm处达到6.1×10
13
cm·Hz
-1/2
·W
-1
，
R
值为0.52 A·W
-1
，是目前报道的在830 nm波长二极管型倒装有机光探测最高值之一.
Abstract
The wide-bandgap polymer (PTzBI-Cl) contains an electron-deficient [1
2
3
]
triazolo[4
5-
f
]
isoindole-5
7(2
H
6
H
)-dione (TzBI) unit
which can be used as an electron-donating polymer to combine with a non-fullerene acceptor
namely Y6DT
to fabricate organic photodetectors (OPDs) that bear inverted device structure. The devices based on high molecular weight PTzBI-Cl-H exhibited lower dark current density and thus superior photodetectivity. The dark current density can be significantly suppressed by optimizing the film thickness of active layer
while the external quantum efficiency can be maintained at a relatively high level. The combination of these advantages leads to an obvious increase in the detectivity. When the active layer thickness increased up to 330 nm
the device exhibited a very low dark current density of 2.3×10
-10
A·cm
-2
at -0.1 V
and the rectification ratio is 10
6
in the range of ±2 V. Under -0.1 V bias
the detectivity of the device is higher than 10
13
cm·Hz
-1/2
·W
-1
in the range of 500-880 nm
with a maximum of 6.1×10
13
cm·Hz
-1/2
·W
-1
and a responsivity of 0.52 A·W
-1
at a working wavelength of 830 nm
both of which are among the highest values of thus far reported OPDs based on the inverted structure at the working wavelength of 830 nm without extra gains.
关键词
有机光探测器近红外分子量厚膜器件
Keywords
Organic photodetectorNear infraredMolecular weightThick-film devices
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