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华南理工大学高分子光电材料与器件研究所 发光材料与器件国家重点实验室 广州 510640
Published:20 February 2018,
Received:28 August 2017,
Revised:13 September 2017,
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Zhong Wen-kai, Xie Rui-hao, Ying Lei, Huang Fei, Cao Yong. High Performance Polymer Photodetectors Enabled by a Naphtho[1, 2-c: 5, 6-c']bis([1, 2, 5]thiadiazole) Based
Zhong Wen-kai, Xie Rui-hao, Ying Lei, Huang Fei, Cao Yong. High Performance Polymer Photodetectors Enabled by a Naphtho[1, 2-c: 5, 6-c']bis([1, 2, 5]thiadiazole) Based
利用基于萘[1,2-c:5,6-c]二[1
2
5]
噻二唑共轭聚合物(NTOD)为给体,富勒烯衍生物PC
71
BM为受体,制备本体异质结聚合物光探测器.NTOD与PC
71
BM的共混薄膜吸收范围为300~830 nm.通过对NTOD:PC
71
BM活性层厚度的调控实现器件暗电流密度的显著降低,增强了探测器的二极管性能,同时保持较高的外量子转化效率.当活性层厚度为385 nm时,聚合物光探测器在-0.1 V偏压下的暗电流为6.69×10
-10
A cm
-2
.在-0.1 V偏压下器件在440~800 nm的工作波段的比探测率均超过10
13
cm Hz
1/2
W
-1
,处于750 nm的工作波长下达到最大比探测率为1.50×10
13
cm Hz
1/2
W
-1
,光响应率为0.22 A W
-1
,这些结果表明基于NTOD:PC
71
BM的有机光探测器具有广阔的应用前景.
Naphtho[1
2-c:5
6-c']bis([1
2
5]
thiadiazole) (NT) unit with centro-symmetric and enlarged planar
π
-conjugated structure is one of the most promising electron-withdrawing moieties for the construction of high-performance conjugated polymers for solar cells and organic field-effect transistors. Recently
an NT based narrow-bandgap conjugated polymer (NTOD)
consisting of NT as the electron-withdrawing unit and 2
5-bis(3-alkylthiophen-2-yl)thieno[3
2-b]thiophene as the electron-donating unit
has been developed
which exhibited a remarkable power conversion efficiency exceeding 10% and might be used to construct device with thick active layer over 300 nm. Considering the impressive photovoltaic performances achieved based on the NT-polymers
here we designed and fabricated solution-processed polymer photodetectors using NTOD as the electron donor. Device with architecture of ITO/PEDOT:PSS/active layer/Al was fabricated to investigate the performance of the photodetector. The active layer was comprised of NTOD as the electron donor and a fullerene derivative of (6
6)-phenyl-C71-butyric acid methyl ester (PC
71
BM) as the electron acceptor
which displayed broad absorption spectra ranging from 400 nm to 830 nm. We noted that the dark current density of the photodetectors was effectively suppressed by increasing the thickness of the NTOD:PC
71
BM based active layer
while the external quantum efficiency (EQE) of the devices maintained relatively high. It is also worth pointing out that
when the thickness of the active layer increased up to 385 nm
the device exhibited low dark current density of 6.69×10
-10
A cm-2 at -0.1 V
for which the specific detectivity (
D
*
) is higher than 10
13
cm Hz
1/2
W
-1
in the range of 440-800 nm
with champion detectivity of 1.50×10
13
cm Hz
1/2
W
-1
and responsivity of 0.22 A W-1 at 750 nm. Moreover
the polymer photodetector exhibited a high detectivity of 1.10×10
13
cm Hz
1/2
W
-1
at 800 nm
suggesting the good detectivity extending to near-infrared (NIR) region. These results indicate that the NTOD polymer has great potential for the construction of high performance polymer photodetectors.
萘二并噻二唑共轭聚合物窄带系光探测器
Naphtho[1 2-c:5 6-c']bis ([1 2 5]thiadiazole)Conjugated polymersNarrow bandgapPolymer photodetector
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