Effects of Annealing Temperature and Active Layer Thickness on the Photovoltaic Performance of Poly(3-hexylthiophene) Photodetector

Shi-jia Gao; Xin Wang; Yu-lin Zhang; Sai Zhang; Wen-qiang Qiao; Zhi-yuan Wang

doi:10.11777/j.issn1000-3304.2019.19206

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Effects of Annealing Temperature and Active Layer Thickness on the Photovoltaic Performance of Poly(3-hexylthiophene) Photodetector

更新时间：2021-01-26

- Effects of Annealing Temperature and Active Layer Thickness on the Photovoltaic Performance of Poly(3-hexylthiophene) Photodetector
- Acta Polymerica Sinica Vol. 51, Issue 4, Pages: 338-345(2020)
- 作者机构：
  
  大连理工大学高分子材料系精细化工国家重点实验室　大连 116024
- 作者简介：
- 基金信息：
- DOI：10.11777/j.issn1000-3304.2019.19206
  CLC：
- Published：2020-4，
  
  Published Online：21 January 2020，
  
  Received：6 December 2019，
  
  Revised：24 December 2019，
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Shi-jia Gao, Xin Wang, Yu-lin Zhang, Sai Zhang, Wen-qiang Qiao, Zhi-yuan Wang. Effects of Annealing Temperature and Active Layer Thickness on the Photovoltaic Performance of Poly(3-hexylthiophene) Photodetector. [J]. Acta Polymerica Sinica 51(4):338-345(2020)
DOI：

Shi-jia Gao, Xin Wang, Yu-lin Zhang, Sai Zhang, Wen-qiang Qiao, Zhi-yuan Wang. Effects of Annealing Temperature and Active Layer Thickness on the Photovoltaic Performance of Poly(3-hexylthiophene) Photodetector. [J]. Acta Polymerica Sinica 51(4):338-345(2020) DOI： 10.11777/j.issn1000-3304.2019.19206.

摘要

以聚3-己基噻吩(P3HT)为给体材料，富勒烯衍生物(PC

BM)为受体材料，制备了一系列结构为ITO/PEDOT:PSS/P3HT:PC

BM/C

/Al的体异质结光电探测器. 研究了120、160、180与200 nm不同光敏层厚度，100、120、130、140与150 °C不同退火温度等条件对器件性能的影响，并采用原子力显微镜(AFM)对光敏层形貌进行了分析. 研究发现，基于180 nm厚光敏层、150 °C退火处理的器件，在−2 V的偏压下550 nm处有最大响应度，为268 mA/W，并且在470 ~ 610 nm范围内响应度都超过了200 mA/W；基于180 nm厚光敏层、120 °C退火处理的器件有最大线性动态范围，为95 dB. 研究表明，适当厚度的光敏层有利于提高光吸收效率与器件的光伏性能；退火处理，可以使光敏层形成均匀的互穿网络结构，进而减小空穴与电子的复合概率，提高器件的光伏性能.

Abstract

Poly(3-hexylthiophene) (P3HT) with good electronic transmission capacity is one of promising material for organic photodetector. Compared with organic solar cells

the research of photodetector based on P3HT is deficient

especially in how to improve the light absorption efficiency and electronic transmission ability of active layer. Here

bulk heterojunction photodetectors with a structure of ITO/PEDOT:PSS/P3HT:PC

BM/C

/Al were prepared by using P3HT as a donor and fullerene derivative (PC

BM) as an acceptor. The change of active layer thickness plays an important role in the effective transfer of photogenerated charge to the electrode. Although increasing the thickness of active layer can increase the light absorption efficiency

it may also lead to the recombination of electrons and holes in the process of long distance transmission. In addition

annealing condition is the key to the film forming process. Adjusting the annealing temperature can control the self-assembly of active layer

thus obtaining the ideal nano-size phase separation structure and reducing the recombination probability of photoexcitons. Therefore

the active layer thickness in P3HT devices varied at 120

160

180 and 200 nm and the devices were annealed at 100

120

130

140 and 150 °C in order to probe the effect of these variables on photodetector performance. It was found that the device with a 180-nm thick active layer

after being annealed at 150 °C

exhibited the maximal responsivity of 268 mA/V at 550 nm and more than 200 mA/W in the wavelengths of 470 − 610 nm under the bias of −2 V. Furthermore

the same device showed a linear dynamic range of 95 dB after annealing at 120 °C. Our study demonstrates that the thickness of active layer is of great importance to the light absorption efficiency and the device performance

while the annealing treatment can significantly affect the morphology of active layer

as evidenced by AFM study

which reduces the recombination probability of holes and the electrons and thus improves the photodetector performance.

关键词

聚(3-己基噻吩)退火膜厚聚集态结构光电探测器

Keywords

Poly(3-hexylthiophene)AnnealingFilm thicknessFilm morphologyPhotodetector

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School of Mechanical Engineering, Qingdao University of Technology

State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences

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