This study has focused on preparing an OFET-structured memory device based on poly(3-hexylthiophene)/poly(ethylene oxide) doped with ethyl viologen diperchlorate (P3HT/(PEO+EV)) bilayer solid membranes and investigating the electrical response of this system.The obtained data revealed that the conductivity of the system can be reversibly switched between high and low conductance states with write and erase bias at +3 and-3 V

respectively

and readout bias at 0.5 V.The system showed good resistive bistable memory characteristics with the ON/OFF current ratio up to 105.Although the ON current decayed with the retention time

the write/erase action remained robust after 2800 s readout operation

indicating the reliability of the switching characteristics.To better understand the memory mechanism

confocal laser scanning microscopy (CLSM) was used to monitor the fluorescence fluctuations during the write and erase pulses.The obtained results showed that fluorescence from P3HT layer quenched gradually when the switching-ON pulse was applied

indicating polarons formed at the source electrode and then propagated from the source to the drain electrode with a rate of around 120 m/s.However

fluorescence recovered immediately when the switching-OFF pulse was applied

demonstrating P3HT polarons were reduced to neutral state.