含硅宽禁带聚合物的合成及其光电性能研究

孙晓艺; 李金钰; 刘辉; 路萍

doi:10.11777/j.issn1000-3304.2018.17247

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含硅宽禁带聚合物的合成及其光电性能研究

研究论文 | 更新时间：2021-01-26

- 含硅宽禁带聚合物的合成及其光电性能研究
  增强出版
- Design, Synthesis and Optoelectronic Properties of Silicon-containing Wide Bandgap Light-emitting Polymers
- 高分子学报 2018年第2期页码：284-294
- 作者机构：
  
  超分子结构与材料国家重点实验室吉林大学化学学院长春 130012
- 作者简介：
  
  路萍, E-mail: lup@jlu.edu.cn Ping Lu, E-mail: lup@jlu.edu.cn
- 基金信息：
  
  国家自然科学基金(21374038)
- DOI：10.11777/j.issn1000-3304.2018.17247
  中图分类号：
- 纸质出版日期：2018-2-20，
  
  收稿日期：2017-8-31，
  
  修回日期：2017-9-22，
扫描看全文
孙晓艺, 李金钰, 刘辉, 路萍. 含硅宽禁带聚合物的合成及其光电性能研究[J]. 高分子学报, 2018,(2):284-294.

Xiao-yi Sun, Jin-yu Li, Hui Liu, Ping Lu. Design, Synthesis and Optoelectronic Properties of Silicon-containing Wide Bandgap Light-emitting Polymers[J]. Acta Polymerica Sinica, 2018,(2):284-294.
孙晓艺, 李金钰, 刘辉, 路萍. 含硅宽禁带聚合物的合成及其光电性能研究[J]. 高分子学报, 2018,(2):284-294. DOI： 10.11777/j.issn1000-3304.2018.17247.

Xiao-yi Sun, Jin-yu Li, Hui Liu, Ping Lu. Design, Synthesis and Optoelectronic Properties of Silicon-containing Wide Bandgap Light-emitting Polymers[J]. Acta Polymerica Sinica, 2018,(2):284-294. DOI： 10.11777/j.issn1000-3304.2018.17247.

摘要

采用Suzuki聚合方法合成了以菲并咪唑为侧链的4种含硅宽禁带发光聚合物，并研究了这4种聚合物的光物理、电化学性质与电致发光性能.结果表明四苯基硅基团的引入能够得到宽的带隙，侧基上菲并咪唑的引入可以实现深蓝光发射.其中，基于聚合物

的电致发光器件最大外量子效率为0.65%，最大发光效率为0.33 cd A

-1

，色坐标为（0.163，0.099）.

Abstract

The development of deep-blue light-emitting materials is of vital importance in organic light emitting diodes (OLEDs). Deep blue emission can efficiently reduce the power consumption in full-color displays. In this study

aiming at developing solution-processable materials for low-cost OLEDs

a series of wide bandgap polymers using tetraphenylsilane as the main chain and phenanthro[9

10-d] imidazole (PPI) as the side chain were designed and successfully synthesized

via

Suzuki coupling reactions. The silane group provides the polymers with wide bandgaps

and PPI unit entitles the polymers with high quantum efficiencies. All the polymers show good solubility in common organic solvents even without long alkyl chains. The emission spectra are all located in deep-blue region in THF peaking at 421 nm.

and

show high quantum efficiencies of 82.3%-99.6% in THF.

exhibits a relatively low efficiency of 34.0% due to the intramolecular interactions caused by the dibenzo[b

d]thiophene-5

5-dioxide in the mainchain. And only a few red-shifts in emission spectra are observed in the solid state. They also possess high thermal stability

good morphological stability and appropriate highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy levels. AFM characterization presents that the spin-coating film of the polymers display fairly homogenous and smooth surface morphology with the root mean square roughness of 0.57-0.71 nm. The non-doped solution-processed devices are fabricated with a configuration of ITO/PEDOT:PSS (40 nm)/EML (20 nm)/TPBi (30 nm)/LiF (1.2 nm)/Al (120 nm). Among them

the device using

as emissive layer shows the best performance with a relatively high external quantum efficiency of 0.65% and deep blue CIE coordinates of (0.163

0.099). The maximum peak of EL emission was at 420 nm with narrow full width at half maximum (FWHM). All of these results gives us a new foreground for the design of deep-blue light-emitting polymers and inspire its application in the future.

关键词

聚合物电致发光器件深蓝光宽禁带菲并咪唑四苯基硅

Keywords

Polymer light-emitting diodesDeep-blueWide bandgapPhenanthro[9 10-d]imidazoleTetraphenylsilane

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