面向亚5 nm图案化含硅嵌段共聚物的合成与自组装

陶永鑫; 陈蕾蕾; 刘一寰; 胡欣; 朱宁; 郭凯

doi:10.11777/j.issn1000-3304.2022.22133

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面向亚5 nm图案化含硅嵌段共聚物的合成与自组装

综述 | 更新时间：2024-10-08

- 面向亚5 nm图案化含硅嵌段共聚物的合成与自组装
- Synthesis and Self-assembly of Silicon-containing Block Copolymers for Sub 5 nm Nanolithography
- 高分子学报 2022年53卷第12期页码：1445-1458
- 作者机构：
  
  1.南京工业大学，生物与制药工程学院材料化学工程国家重点实验室，南京 211800
  2.南京工业大学，材料科学与工程学院，南京 211800
- 作者简介：
  
  E-mail: xinhu@njtech.edu.cn
  ningzhu@njtech.edu.cn
- 基金信息：
- DOI：10.11777/j.issn1000-3304.2022.22133
  中图分类号：
- 纸质出版日期：2022-12-20，
  
  网络出版日期：2022-09-09，
  
  收稿日期：2022-04-20，
  
  录用日期：2022-05-27
- 稿件说明：
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陶永鑫,陈蕾蕾,刘一寰等.面向亚5 nm图案化含硅嵌段共聚物的合成与自组装[J].高分子学报,2022,53(12):1445-1458.

Tao Yong-xin,Chen Lei-lei,Liu Yi-huan,et al.Synthesis and Self-assembly of Silicon-containing Block Copolymers for Sub 5 nm Nanolithography[J].ACTA POLYMERICA SINICA,2022,53(12):1445-1458.
陶永鑫,陈蕾蕾,刘一寰等.面向亚5 nm图案化含硅嵌段共聚物的合成与自组装[J].高分子学报,2022,53(12):1445-1458. DOI： 10.11777/j.issn1000-3304.2022.22133.

Tao Yong-xin,Chen Lei-lei,Liu Yi-huan,et al.Synthesis and Self-assembly of Silicon-containing Block Copolymers for Sub 5 nm Nanolithography[J].ACTA POLYMERICA SINICA,2022,53(12):1445-1458. DOI： 10.11777/j.issn1000-3304.2022.22133.

摘要

嵌段共聚物的合成及其应用是高分子科学领域的研究热点. 近年来，国内外学者设计了一系列新型含硅嵌段共聚物，具有较高的Flory-Huggins相互作用参数，在自组装制备亚5 nm特征图案方面取得了重大突破，有望应用于下一代半导体制造. 本文总结了聚二甲基硅氧烷基、聚含硅苯乙烯基和聚倍半硅氧烷基3种类型含硅嵌段共聚物的合成，讨论了在本体和薄膜自组装纳米图案化方面的研究进展，对相关领域存在的挑战与机遇进行了展望.

Abstract

Ever-shrinking pattern features present challenges for the semiconductor industry. Directed self-assembly (DSA) of block copolymers (BCP) has been demonstrated as one high throughput and low cost manufacturing candidate for the next-generation of nanolithography. The thermodynamically immiscible polymer blocks self-assemble into the ordered nanostructures with varied morphologies

and the feature size is dependent on the Flory-Huggins interaction parameter (

) and the molecular weight (

) of BCP according to the se

lf-consistent mean field theory. Design

synthesis

and self-assembly of novel high

low

BCP is the long-term target for the community of polymer chemistry and materials science with the aim to achieve small size microphase separation domains. This review focuses on self-assembly of silicon-containing block copolymers for sub 5 nm nanolithography. Silicon-containing block copolymers not only exhibit high

but also improve etch contrast property

which are considered as the promising materials for nanolithography. After a brief introduction of DSA

the main body is divided into three sections according to the chemical structures

including poly(dimethylsioxane)-based BCP

poly(silicon containing styrene)-based BCP

and poly(hedraloligomeric silsesquioxane)-based BCP. Each section covers self-assembly of bulk polymer and/or thin film

from historic initial study (

5 nm) to the recent progress (

5 nm). Synthesis

characterizations

assembly conditions

feature sizes are discussed in detail. Finally

the challenges and opportunities are proposed. We hope this review would provide insights into polymer science and nanolithography technology.

关键词

含硅嵌段共聚物自组装纳米光刻亚5 nmFlory-Huggins相互作用参数

Keywords

Silicon-containing block copolymerSelf-assemblyNanolithographySub 5 nmFlory-Huggins interaction parameter

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